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July 2001
FDD6530A
20V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 21 A, 20 V
R DS(ON) = 32 m ? @ V GS = 4.5 V
R DS(ON) = 47 m ? @ V GS = 2.5 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS( ON) and fast switching speed.
Applications
? DC/DC converter
? Low gate charge (6.5 nC typical)
? Fast switching
? High performance trench technology for extremely
low R DS(ON)
? Motor drives
.
D
D
G
S
TO-252
G
S
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 3)
21
A
– Pulsed
(Note 1a)
100
P D
Power Dissipation
(Note 1)
33
W
(Note 1a)
(Note 1b)
3.3
1.6
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
4.5
45
96
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD6530A
Device
FDD6530A
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDD6630A Rev C (W)
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相关代理商/技术参数
FDD6530A_Q 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6606 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6606_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6612 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench? MOSFET
FDD6612A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6612A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 30A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes
FDD6612A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 30A, TO-252
FDD6612A_F054 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK, SINGLE, NCH - Tape and Reel